The revolution of the next semiconductors is by Samsung. And it takes its name from the material that the researchers of the Korean multinational developed: amorphous boron nitride (a-BN). Its use will allow to create Dram and Nand especially for server memories.
The material was developed together with researchers from the Ulsan National Institute of Science and Technology (UNIST) and the University of Cambridge. What is so special about this material? First of all, a robust electrical property, with a very low dielectric constant of 1.78, ideal for the microconnections that must be made in a chip; then it has high mechanical strength and great insulation capacity, minimizing electrical interference.
In addition, it can be produced, literally growing it on wafers, at a temperature of 400 ° C, which is currently impossible for semiconductors based on "simple" graphene which must be made at lower temperatures.
The amorphous boron nitride, however, derives from graphene and in particular from white graphene, but has a different molecular structure that makes it totally different. This makes it particularly suitable for the manufacture of silicon semiconductors, and therefore for new generation chips, causing - as Samsung researchers claim - a considerable acceleration in the advent of the next generations of microprocessors and memories.
However, production of new semiconductors with amorphous boron nitride will not start immediately. According to Seongiun Park, head of the Sait Lab, the interest in 2D materials (precisely the amorphous boron nitride crystals, ed.) And the materials that derive from them has grown exponentially.
However, there are still many challenges to overcome. to be able to use these materials in the construction of semiconductors, but we are pushing hard for a substantial paradigm shift in the context of concrete production. In short, a new semiconductor revolution is upon us, even if it will not be in a very short time.
New technologies in China
China's first 500 kilowatt sea wave power generator was delivered on Tuesday June 30 to the Chinese Academy of Sciences Institute of Energy Conversion in Guangzhou. Named Sharp Eagle - Zhoushan, the converter is part of a wave energy demonstration project initiated by the Chinese Ministry of Natural Resources, located near the island of Dawanshan, in the city of Zhuhai in the province of Guangdong.
Developed by the Chinese institute and manufactured by China Merchants Heavy Industry Co. Ltd., the device currently represents the largest wave energy converter in China. The Institute of Energy Conversion in Guangzhou of the Chinese Academy of Sciences has announced a collaboration with various companies in the sector to further develop this new technology and structures dedicated to producing clean energy from marine waves.